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3 billion transistors to build the core of GF100 and GF110

Release time：

2022-03-02 09:16

● The secret I have to tell NVIDIA GTC 2010
At the NVIDIA GTC 2010 conference in September this year, the author was invited to the United States to participate in this event, and also had the honor to visit NVIDIA's headquarters in Silicon Valley. One stop during the visit to the headquarters is the GTL (Game Test Lab) department, which conducts comprehensive game performance tests for all released, unreleased and rival released products, because GTL Lab is NVIDIA's "game of the road" an important part of.
During my visit to the GTL lab, the author saw the GeForce GTX 580, which was released today. Due to the non-disclosure agreement, I could not report it. It is worth mentioning that except for the GeForce GTX 580, other unreleased products I also met by chance during this visit, which means that NVIDIA already has the second-generation DirectX 11 product, but it is not in a hurry to release it, maybe it is to act conservatively against the opponent's phone.
In the GTL lab report, the photo information "carefully" smeared by the author is actually the official test data of the GeForce GTX 580 single card and SLI performance.
● The core of GF110 is built for the same 3 billion transistors
The GF100 core uses 3 billion transistors to "build together", and the GF110 is also made of this number of transistors. Moreover, the GF110 core and the GF100 core use the exact same architecture design, that is to say, the architecture design, specification settings and functions are the same. So is GF110 the full specification product of GF100?
The GeForce GTX 580 uses the GF110-375-A1 core manufactured by TSMC using a 40nm process. It consists of 3 billion transistors and comes standard with 512 stream processors, 48 ​​raster processors, 64 texture units and a 384bit video memory controller by default. .
Although the GeForce GTX 580 is NVIDIA's second-generation DirectX 11 product, the GF110 core cannot escape the relationship with the GF100. Not only the core architecture, specifications and functions are the same, even the core model is only one word behind the GF100-375-A1 of the GeForce GTX 480.
GeForce GTX 580 is equipped with 12 SAMSUNG K4G10325FE-HC04 particles with a specification of 16M*32bit, which constitute a combination of 384bit/1536MB.
At present, the latest version of GPU-Z still cannot officially recognize the GeForce GTX 580. For example, many key parameters in the above picture cannot be recognized, and the memory particles are also recognized as GDDR3. However, the memory capacity and the frequency of the graphics card are correctly identified, the memory capacity is 1536MB, and the default frequency of the public version is 772MHz/1544MHz/4008MHz

The structure and working principle of thyristor

Thyristor is the abbreviation of thyristor, also known as silicon controlled rectifier (SCR), formerly referred to as thyristor. The thyristor can be turned on by a signal, but cannot be turned off, so it is called a semi-controlled device. The name thyristor often refers specifically to a basic type of thyristor—a common thyristor. But in a broad sense, thyristor also includes many derivative devices, such as bidirectional thyristor (TRIAC), fast thyristor (FST), reverse conducting thyristor (RCT) and light-controlled thyristor (LTT), etc.

2022

02-24

Difference Between Thyristor and Diode

The conduction condition of the thyristor is: the forward voltage is applied and the gate has a trigger current; its derived devices include: fast thyristor, bidirectional thyristor, reverse conducting thyristor, light-controlled thyristor, etc. It is a high-power switching semiconductor device, which is represented by the text symbols "V" and "VT" in the circuit (represented by the letters "SCR" in the old standard).

2022

02-24

2020 SCR Prospect Forecast

The thyristor industry prospect forecast analysis report is based on the analysis of the historical development status, supply and demand status, competition pattern, economic operation, downstream industry development, and downstream industry market demand of the thyristor industry. The development trend, market capacity, competitive trend, subdivision downstream market demand, etc. will be judged and forecasted.

2022

02-24

Successfully participated in the Beijing Foundry Exhibition

From September 8th to 10th, 2015, the general manager of the company, Lin Jianling, personally led the team to successfully participate in the Beijing Foundry Exhibition and achieved fruitful results.

2022

02-24

Jinli Electric Co., Ltd. new product development!

Jinli Electric Co., Ltd. has been insisting on continuous innovation of products for many years. At present, the 100mm/7000V thyristor products have passed the trial period and are officially put into the market.

2022

02-24

KP1500A/4000V high-voltage soft-start components put into the market

After more than a year of development and actual test operation, Jinli Electric's KP1500A/4000V high-voltage soft-start components were officially put into the market during the 68th International Electronics Exhibition in Shanghai.

2022

02-24

3 billion transistors to build the core of GF100 and GF110

At the NVIDIA GTC 2010 conference in September this year, the author was invited to the United States to participate in this event, and also had the honor to visit NVIDIA's headquarters in Silicon Valley. One stop during the visit to the headquarters is the GTL (Game Test Lab) department, which conducts comprehensive game performance tests for all released, unreleased and rival released products, because GTL Lab is NVIDIA's "game of the road" an important part of.

2022

02-24

Research progress of ultra-low voltage electric double layer transistor

Thin-film transistors (TFTs) are an important class of semiconductor devices, which have a wide range of application values in flat panel displays, sensors and other fields. In recent years, wide-bandgap oxide semiconductors have attracted extensive research interests in the field of thin-film transistors due to their low-temperature film formation, high electron mobility, and transparency to visible light.

2022

02-24

The era of silicon transistors and semiconductors is coming to an end

In the coming decades, chipmakers will not be able to make faster silicon chips by integrating smaller transistors on a single chip because the silicon transistors are too small. Breaks easily and at the same time very expensive.

2022

02-24

Jinli Electric Co., Ltd.

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